The formation of high number density InSb quantum dots, resulting from direct InSb/GaSb (001) heteroepitaxy
نویسندگان
چکیده
We report the direct deposition of indium antimonide, by molecular beam epitaxy (MBE) on gallium antimonide, resulting in the formation of quantum dots (QDs) with a maximum density of 5.3 10 cm . Using reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM) for the analysis of samples with InSb depositions of 1–6 ML equivalent thickness, we observe an apparent value for the critical thickness for InSb/GaSb (001) deposition of 2.370.3 ML, for the growth temperatures of 275 1C and 320 1C. & 2015 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).
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تاریخ انتشار 2015